In-situ growth of HfO2 on clean 2H-MoS2 surface: Growth Mode, Interface Reactions and Energy Band Alignment

Chen, C. P., Ong, B. L., Ong, S. W., Ong, W., Tan, H. R., Chai, J. W., … Tok, E. S. (2017). In-situ growth of HfO2 on clean 2H-MoS2 surface: Growth Mode, Interface Reactions and Energy Band Alignment. Applied Surface Science. https://doi.org/10.1016/j.apsusc.2017.05.097